Molecular Beam Epitaxy

Molecular Beam Epitaxy, 1st Edition

Applications to Key Materials

Molecular Beam Epitaxy, 1st Edition,Robin F.C. Farrow,ISBN9780815513711


R Farrow   

William Andrew



229 X 152

A description of the use of molecular beam epitaxy for a range of key materials systems of interest for both technological and fundamental reasons.

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USD 72.95


In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.


Engineers and technologists in the semiconductor, optoelectronic, optics, cutting tool, refractory fibers, filter and other industries.

Robin F.C. Farrow

Affiliations and Expertise

IBM Almaden, CA, USA

Molecular Beam Epitaxy, 1st Edition

1. The Technology and Design of Molecular Beam Epitaxy Systems
1.0 Introduction
2.0 Molecular Beam Epitaxy
3.0 MBE System Development
4.0 Vacuum
5.0 MBE Components: Sources
6.0 MBE Components: Shutters and Beam Interruptors
7.0 MBE Components: Substrate Heater Designs
8.0 Temperature Measurement and Control
9.0 Flux Monitoring Techniques
10.0 Preparation, Diagnostics and Analysis
11.0 MBE System Design: Retrospect and Prospect
12.0 Process and System Automation
2. Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs
1.0 Introduction
2.0 The Development of High Purity MBE Technology
3.0 Growth Processes
4.0 Substrate Orientation
5.0 Oval Defects
6.0 Surface Morphology and Interface Roughness
7.0 Substrate Cleaning and MBE Growth: Impurity and Defect Incorporation
8.0 Isoelectronic and Unincorporated Dopants
9.0 Surface Preservation
10.0 Preparation of an MBE System for the Growth of High Purity III/V Semiconductors
11.0 Characterization Techniques for Epitaxial Semiconductor Layers
12.0 Impurity Energy Levels in GaAs and AIGaAs
3. Gas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties
1.0 Introduction
2.0 Chemistry
3.0 Group V Gas Sources
4.0 The MBE and Gas Handling Systems
5.0 Procedures
6.0 Single Bulk Layers
7.0 Quantum Well and Superlattice Studies
4. Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures
1.0 General Introduction
2.0 CdTe-Based Heterostructures
3.0 ZnSe-Based Heterostructures
4.0 Summary
5. Elemental Semiconductor HeterostructuresùGrowth, Properties, and Applications
1.0 Introduction
2.0 Growth of Si1-xGex Alloys
3.0 Stability of Si1-xGex Films
4.0 Long Range Order in the Si1-xGex System
5.0 Device Applications of Si1-xGex Alloys
6.0 Conclusions
6. MBE Growth of High Tc Superconductors
1.0 Introduction
2.0 Oxide MBE Systems
3.0 Specific High Tc Materials and Demonstrated Synthesis Capabilities
4.0 Future Directions
5.0 Conclusions
7. MBE Growth of Artificially-Layered Magnetic Metal Structures
1.0 Introduction
2.0 Seeded Epitaxy of Magnetic Metals
3.0 Structural and Magnetic Properties of Artificially-Layered Magnetic Metal Structures
4.0 Conclusions
8. Reflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam Epitaxy
1.0 Introduction
2.0 Diffraction Geometry
3.0 Diffraction Fundamentals
4.0 Diffraction Measurements
5.0 Simple Growth Models
6.0 Conclusion
Appendix: Two-Level Diffraction

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