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Comprehensive Semiconductor Science and Technology, Six-Volume Set
 
 

Comprehensive Semiconductor Science and Technology, Six-Volume Set, 1st Edition

 
Comprehensive Semiconductor Science and Technology, Six-Volume Set, 1st Edition,Pallab Bhattacharya,Roberto Fornari,Hiroshi Kamimura,ISBN9780444531438
 
 
 

Bhattacharya  &   Fornari  &   Kamimura   

Elsevier Science

9780444531438

3608

Obtain a complete understanding of the relationship between the many different disciplines and approaches to semiconductor research.

Print Book

Hardcover

In Stock

Estimated Delivery Time
USD 2,475.00
 
 

Key Features

  • Provides a comprehensive global picture of the semiconductor world

  • Each of the work's three sections presents a complete description of one aspect of the whole

  • Written and Edited by a truly international team of experts

Description

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world.

 

The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us.

Readership

Faculty, Scientists, Researchers and Graduate Students in Physics, Materials Science, (Bio)Chemistry or Engineering Departments at universities worldwide.
Additional relevant fields of research include: Optoelectronics, Condensed Matter Science, Surface Science, Magnetism and Quantum Mechanics.
Researchers in large corporations and governmental labs working with Semiconductors.

Pallab Bhattacharya

Pallab Bhattacharya is the Charles M. Vest Distinguished University Professor of Electrical Engineering and Computer Science and the James R. Mellor Professor of Engineering in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. He received the M. Eng. and Ph.D. degrees from the University of Sheffield, UK, in 1976 and 1978, respectively. Professor Bhattacharya was an Editor of the IEEE Transactions on Electron Devices and is Editor-in-Chief of Journal of Physics D. He has edited Properties of Lattice-Matched and Strained InGaAs (UK: INSPEC, 1993) and Properties of III-V Quantum Wells and Superlattices (UK: INSPEC, 1996). He has also authored the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition). His teaching and research interests are in the areas of compound semiconductors, low-dimensional quantum confined systems, nanophotonics and optoelectronic integrated circuits. He is currently working on highspeed quantum dot lasers, quantum dot infrared photodetectors, photonic crystal quantum dot devices, and spin-based heterostructure devices. From 1978 to 1983, he was on the faculty of Oregon State University, Corvallis, and since 1984 he has been with the University of Michigan. He was an Invited Professor at the Ecole Polytechnic Federale de Lausanne, Switzerland, from 1981 to 1982. Professor Bhattacharya is a member of the National Academy of Engineering. He has received the John Simon Guggenheim Fellowship, the IEEE (EDS) Paul Rappaport Award, the IEEE (LEOS) Engineering Achievement Award, the Optical Society of America (OSA) Nick Holonyak Award, the SPIE Technical Achievement Award, the Quantum Devices Award of the International Symposium on Compound Semiconductors, and the IEEE (Nanotechnology Council) Nanotechnology Pioneer Award. He has also received the S.S. Attwood Award, the Kennedy Family Research Excellence Award, and the Distinguished Faculty Achievement Award from the University of Michigan. He is a Fellow of the IEEE, the American Physical Society, the Institute of Physics (UK), and the Optical Society of America.

Affiliations and Expertise

Pallab Bhattacharya, College of Engineering, University of Michigan, USA.

Roberto Fornari

Roberto Fornari studied Solid State Physics at the University of Parma, Italy. He is presently director of the Leibniz Institute for Crystal Growth (IKZ) in Berlin and holds the Chair of Crystal Growth at the Physics Dept. of the Humboldt University Berlin (joint appointment). Before moving to Germany in 2003 he has worked over twenty years as research scientist at the Institute for Electronic and Magnetic Materials (MASPEC, later IMEM) of the Italian CNR where he led different research projects on growth and thermal processing of bulk III-V semiconductors, HVPE and MOVPE of Nitrides, characterization of semiconductors by electrical and optical techniques. He has authored/co-authored about 170 scientific papers, seven patents and different book chapters. He has edited books and proceedings on crystal growth and semiconductors physics and was subject editor of the Encyclopaedia of Materials published by Pergamon Press in 2001.He is presently member of the editorial board of J.Cryst.Growth, Cryst. Res.Technol. and J. Optoelectron. Advanced. Materials. He has been Chairman of the IUCr Commission for Crystal Growth and Characterization of Materials from 1999 to 2005 and then member till 2008. From 2001 to 2007 he has been in the Executive Committee of the Intern. Org. for Crystal Growth and he presently serves as Vice-President of this organization.

Affiliations and Expertise

Roberto Fornari, Institute of Physics, humboldt University, Berlin, Germany.

Hiroshi Kamimura

Hiroshi Kamimura is currently a senior adviser of Tokyo University of Science (TUS), and a guest professor of Research Institute for Science and Technology at the TUS. He was awarded a Doctor of Science in Physics from University of Tokyo in 1959. He worked at Bell-Telephone laboratories at Murray Hill, USA as a Member of Technical Staff in 1961 to 64. In 1965 he became a lecturer, then an associate professor and a professor at Dept. of Physics, Faculty of Science in University of Tokyo. In 1974-75 he worked with Sir Nevill Mott as a guest scholar at Cavendish Laboratory in Cambridge, UK. In 1991 he retired from University of Tokyo, and then he became a professor at Dept of Applied Physics, Faculty of Science at the TUS. His interests are in the theory of condensed matter physics and of materials science, in particular semiconductor physics, high temperature superconductivity and superionic conduction. He was President of physical society of Japan in 1984-85, Chairman of IUPAP semiconductor Commission in 1985-90. He is an honorary fellow of Institute of Physics, UK, a life-fellow of American Physical Society, an emeritus professor of University of Tokyo and an emeritus professor of Tokyo University of Science.

Affiliations and Expertise

Hiroshi Kamimura, Department of Applied Physics, Tokyo University of Science, Japan.

Comprehensive Semiconductor Science and Technology, Six-Volume Set, 1st Edition

Section 1: Physics and Fundamental Theory

Volume 1 - Physics and Fundamental Theory Part 1:
Electrons in semiconductors: Empirical and ab initio theories, Ab initio theories of the structural, electronic and optical properties of semiconductors: bulk crystals to nanostructures, Impurity Bands in Group-IV Semiconductors, Integer Quantum Hall Effect, Composite fermion theory of the fractional Quantum Hall Effect, Ballistic Transport in GaAs/AIGaAs Heterostructures, Spin-Hall effect: Theoretical, Thermal conduction / thermoelectric power, Electronic structures of Quantum Dots, Control over single electron spins in quantum dots, Atomic structures and electronic properties of semiconductor interfaces

Volume 2 - Physics and Fundamental Theory Part 2:
Contact hyperfine interactions in semiconductor heterostructures, Optical properties of semiconductors, Bloch oscillation and ultrafast coherent optical phenomena, Optical properties of Si Semiconductor nanocrystals, Excitons and polaritons in semiconductors, Magneto-spectroscopy of semiconductors, Microcavities of semiconductor quantum structures, Semimagnetic semiconductors, Electronic stats and properties of carbon crystalline from graphene to carbon nanotubes, Angle-Resolved Photoemission Spectroscopy of Graphen, Graphite, and Related Compounds, Theory of Superconductivity in Graphite Intercalation Compounds

Section 2: Materials, Preparation and Properties

Volume 3 - Materials, Preparation and Properties Part 1:
Crystal Growth, Molecular Beam Epitaxy, Bulk Growth of Crystals of III-V Compound Semiconductors, New Developments in Czrchralski Silicon, Growth of CdZnTe Bulk Crystal, Growth of bulk SiC with Low Defect Densities and SiC epitaxy, Growth of Bulk GaN Crystals, Growth of bulk A1N Crystals, Growth of Bulk ZnO, Organometallic Vapor Phase Growth of Group III Nitrides, ZnO epitaxial growth, Nanostructures of metal oxides

Volume 4 - Materials, Preparation and Properties Part 2:
Integration of Dissimilar Materials, Ion Implantation in Group III Nitrides, Contacts to Wide Band Gap Semiconductors, Formation of Ultra-shallow Junctions, New High-K Materials for C-MOS Applications, Ferroelectric thin layers, Amorphous chalcogenides, Scanning tunnelling microscopy and spectroscopy of semiconductor materials, Study of Semiconductors by High Resolution Microscopy and Aberration Corrected Microscopy, Assessment of semiconductors by Scanning Electron Microscopy Techniques, Characterization of Semicounductors by X-Ray Diffraction and Topography, Electronic Energy Levels in Group III Nitrides, Organic Semiconductors

Section 3: Devices and Applications

Volume 5 - Devices and Applications Part 1:
SiGe/Si Heterojunction Bipolar Transistors and Circuits, Si MOSFETs for VLSI: Scaling Issues and Limits, High Electron Mobility Transistors and Their Applications, High-Frequency and High-Speed InP-Based Heterojunction Bipolar Transistors, Negative Differential Resistance Devices and Circuits, High-Frequency Nitride-Based Field Effect Transistors, Wide band Gap Semiconductor Power Devices, Single Electron Transistors and Their Applications, Molecular Electronics, Electronic and Optoelectronic Properties and Applications of Carbon Nanotubes, Flexible Electronics, MEMS Based Sensors, Avalanche Photodiodes, Optoelectronic Devices and Their Integration by Disordering, Quantum Well Lasers and Their Applications, Quantum Cascade Lasers, Slow Light Devices and Applications

Volume 6 - Devices and Applications Part 2:
Short Wavelength Light Sources, Nitride-Based LEDs and Superluminescent LEDs, ZnO Based Materials and Devices, MCT Materials and Detectors, Quantum Well Infrared Detectors, Type II Superlattice Detectors, Terahertz Detection Devices, Amorphous and Nanocrystal Silicon Solar Cells, Quantum Dot Lasers: Physics and Applications, High-Performance Quantum Dot Lasers, Quantum Dot Infrared Photodetectors, Photonic Crystal Microcavity Light Sources, Photonic Crystal Waveguides and Filters, Spintronic Devices, Spin-Based Semiconductor Heterostructure Devices, Spin-Polarized Transport and Spintronic Devices

 

List of topics:

Electrons in semiconductors: Empirical and ab initio theories

Ab initio theories of the structural, electronic and optical properties of semiconductors: bulk crystals to nanostructures

Impurity Bands in Group-IV Semiconductors

Integer Quantum Hall Effect

Composite fermion theory of the fractional quantum Hall effect

Ballistic Transport in GaAs/AlGaAs Heterostructures

Spin-Hall effect: Theoretical

Thermal conduction / thermoelectric power

Electronic structures of Quantum Dots

Control over single electron spins in quantum dots

Atomic structures and electronic properties of semiconductor interfaces

Contact hyperfine interactions in semiconductor heterostructures

Optical properties of semiconductors

Bloch oscillation and ultrafast coherent optical phenomena

Optical properties of Si semiconductor nanocrystals

Excitons and polaritons in semiconductors

Magneto-spectroscopy of semiconductors

Microcavities of semiconductor quantum structures

Semimagnetic semiconductors

Electronic states and properties of carbon crystalline from graphene to carbon nanotubes

Angle-Resolved Photoemission Spectroscopy of Graphen, Graphite, and Related Compounds

Theory of Superconductivity in Graphite Intercalation Compounds

Crystal Growth: an Overview

Molecular Beam Epitaxy: An Overview

Bulk Growth of Crystals of III-V Compound Semiconductors

New Developments in Czochralski Silicon

Growth of CdZnTe Bulk Crystal

Growth of bulk SiC with Low Defect Densities and SiC epitaxy

Growth of Bulk GaN Crystals

Growth of bulk A1N Crystals

Growth of Bulk ZnO

Organometallic Vapor Phase Growth of Group III Nitrides

ZnO epitaxial growth

Nanostructures of metal oxides

Growth of Low Dimensional Semiconductors Structures

Integration of Dissimilar Materials

Ion Implantation in Group III Nitrides

Contacts to Wide Band Gap Semiconductors

Formation of Ultra-shallow Junctions

New High-K Materials for C-MOS Applications

Ferroelectric thin layers

Amorphous chalcogenides

Scanning tunneling microscopy and spectroscopy of semiconductor materials

Study of Semiconductors by High Resolution Microscopy and Aberration Corrected Microscopy

Assessment of semiconductors by Scanning Electron Microscopy Techniques

Characterization of Semiconductors by X-Ray Diffraction and Topography

Electronic Energy Levels in Group III Nitrides

Organic Semiconductors

SiGe/Si Heterojunction Bipolar Transistors and Circuits

Si MOSFETs for VLSI: Scaling Issues and Limits

High Electron Mobility Transistors and Their Applications

High-Frequency and High-Speed InP-Based Heterojunction Bipolar Transistors

Negative Differential Resistance Devices and Circuits

High-Frequency Nitride-Based Field Effect Transistors

Wide band Gap Semiconductor Power Devices

Single Electron Transistors and Their Applications

Molecular Electronics

Electronic and Optoelectronic Properties and Applications of Carbon Nanotubes

Flexible Electronics

MEMS Based Sensors

Avalanche Photodiodes

Optoelectronic Devices and Their Integration By Disordering

Quantum Well Lasers and Their Applications

Quantum Cascade Lasers

Slow Light Devices and Applications

Short Wavelength Light Sources

Nitride-Based LEDs and Superluminescent LEDs

ZnO Based Materials and Devices

MCT Materials and Detectors

Quantum Well Infrared Detectors

Type II Superlattice Detectors

Terahertz Detection Devices

Amorphous and Nanocrystal Silicon Solar Cells

Quantum Dot Lasers: Physics and Applications

High-Performance Quantum Dot Lasers

Quantum Dot Infrared Photodetectors

Photonic Crystal Microcavity Light Sources

Photonic Crystal Waveguides and Filters

Spintronic Devices

Spin-Based Semiconductor Heterostructure Devices

Spin-Polarized Transport and Spintronic Devices

 
 
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