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Silicon-Germanium Strained Layers and Heterostructures
 
 

Silicon-Germanium Strained Layers and Heterostructures, 1st Edition

Semi-conductor and semi-metals series

 
Silicon-Germanium Strained Layers and Heterostructures, 1st Edition,M. Willander,Suresh Jain,ISBN9780127521831
 
 
 

  &      

Academic Press

9780127521831

9780080541020

322

152 X 229

A comprehensive overview of recent research on Silicon-Germanium structures, informing the development of semi-conductors.

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Key Features

* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
* Appropriate for students and senior researchers

Description

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices.

Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.

Readership

Students and senior researchers in Materials Science. Scientists in industry working with semi-conductors

M. Willander

Affiliations and Expertise

Göteborg University and Linköping University

Suresh Jain

Affiliations and Expertise

National Physical Laboratory, New Delhi, India

Silicon-Germanium Strained Layers and Heterostructures, 1st Edition

Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.
 
 

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