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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization
 
 

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization, 1st Edition

 
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization, 1st Edition,Robert Willardson,Eicke Weber,Constantinos Christofides,Gerard Ghibaudo,ISBN9780127521466
 
 
 

Semiconductors and Semimetals

Willardson   &   Weber   &   Christofides   &   Ghibaudo   

Academic Press

9780127521466

316

229 X 152

Print Book

Hardcover

In Stock

Estimated Delivery Time
USD 260.00
 
 

Key Features

@introbul:Key Features
@bul:* Provides basic knowledge of ion implantation-induced defects
* Focuses on physical mechanisms of defect annealing
* Utilizes electrical, physical, and optical characterization tools for processed semiconductors
* Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Description

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.

Readership

Researchers, graduate students, and professionals dealing with semiconductors; materials scientists; electrical engineers; engineers and physicists working in microelectronics.

Robert Willardson

Affiliations and Expertise

Consulting Physicist, Spokane, Washington, U.S.A.

View additional works by Robert K. Willardson

Eicke Weber

Affiliations and Expertise

Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

View additional works by Eicke R. Weber

Constantinos Christofides

Affiliations and Expertise

University of Cyprus

Gerard Ghibaudo

Affiliations and Expertise

Labaratoire de Physique des Composants a Semiconducteur

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization, 1st Edition

Optical Characterization:
M Fried, T. Lohner, and J. Gyulai, Ellipsometric Analysis.
A. Seas and C. Christofides, Transmission and Reflection Spectoscopy on Ion Implanted Semiconductors.
A. Othonos, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors: Influence of Annealing.
Thermal Wave Analyses:
C. Cristofides, Photomodulated Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of Defects.
U. Zammit, Photothermal Delection Spectroscopy Characterization of Ion-Implanted and Annealed Si Films.
A. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient Spectroscopy of Impurities and Defects in Semiconductors.
Quantum Well Structures and Compound Systems:
R. Kalish and S. Charbonneau, Ion Implantation into Quantum Well Structures.
A.M. Myasnikov and N.N. Gerasimenko, Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors.
Subject Index.
 
 
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