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High Speed Heterostructure Devices
 
 

High Speed Heterostructure Devices, 1st Edition

 
High Speed Heterostructure Devices, 1st Edition,Albert Beer,Eicke Weber,Robert Willardson,Richard Kiehl,T. Gerhard Sollner,ISBN9780127521411
 
 
 

Semiconductors and Semimetals

Beer   &   Weber   &   Willardson   &   Kiehl   &   Gerhard Sollner   

Academic Press

9780127521411

9780080864389

454

229 X 152

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Key Features

@introbul:Key Features
@bul:* The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed
* Offers a complete, three-chapter review of resonant tunneling
* Provides an emphasis on circuits as well as devices

Description

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature.

Readership

Students, academics, researchers, and libraries. Will have strongest appeal for electrical engineers, semiconductor device engineers, condensed matter physicists, and materials scientists.

Albert Beer

Affiliations and Expertise

Consulting Physicist

View additional works by Albert C. Beer

Eicke Weber

Affiliations and Expertise

Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

View additional works by Eicke R. Weber

Robert Willardson

Affiliations and Expertise

Consulting Physicist, Spokane, Washington, U.S.A.

View additional works by Robert K. Willardson

Richard Kiehl

Affiliations and Expertise

IBM T.J. Watson Research Center

T. Gerhard Sollner

Affiliations and Expertise

Lincoln Laboratories

High Speed Heterostructure Devices, 1st Edition

F. Capasso, F. Beltram, S. Sen, A. Palevski, and Y.A. Cho, Quantum Electron Devices: Physics and Applications. P. Solomon, D.J. Frank, S.L. Wright, and F. Canora, GaAs-Gate Semiconductor-Insulator-Semiconductor FET.M.M. Hashemi and U.K. Mishra, Unipolar InP-Based Transistors. R.A. Kiehl, Complementary Heterostructure FET Integrated Circuits. T. Ishibashi, GaAs-Based and InP-Based Heterostructure Bipolar Transistors. H.C. Liu and T.C.L.G. Sollner, High Frequency Resonant-Tunneling Devices. H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits. References. Index.
 
 

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