@bul:* The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed
* Offers a complete, three-chapter review of resonant tunneling
* Provides an emphasis on circuits as well as devices
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature.
Students, academics, researchers, and libraries. Will have strongest appeal for electrical engineers, semiconductor device engineers, condensed matter physicists, and materials scientists.