Molecular Beam Epitaxy

Molecular Beam Epitaxy, 1st Edition

From Research to Mass Production

Molecular Beam Epitaxy, 1st Edition,Mohamed Henini,ISBN9780123878397

M Henini   

Elsevier Science




276 X 216

This multi-contributor handbook reviews the research fundamentals and industrial applications of molecular beam epitaxy, an advanced deposition technique for nanostructured electronic and optoelectronic devices, which has been linked to four Nobel Prizes.

Print Book + eBook

USD 255.54
USD 425.90

Buy both together and save 40%

Print Book


In Stock

Estimated Delivery Time
USD 229.95

eBook Overview

VST (VitalSource Bookshelf) format

DRM-free included formats : EPUB, Mobi (for Kindle), PDF

USD 195.95
Add to Cart

Key Features

  • Condenses fundamental science of MBE into a modern reference, speeding up literature review
  • Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
  • Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community


This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.

MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.


Scientists and engineers working with semiconductor materials and devices or with MBE or related deposition techniques

Information about this author is currently not available.

Molecular Beam Epitaxy, 1st Edition

1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects; 2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future; 3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy; 4. Droplet Epitaxy of Nanostructures; 5. Self-assembled Quantum Dots; 6. Migration Enhanced Epitaxy of Low Dimensional Structures; 7. Surfactant-modified Epitaxy; 8. MBE Growth of High Mobility 2DEG; 9. MBE of GaAsBi; 10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys; 11. MBE of Dilute Nitride Optoelectronic Devices; 12. The Effects of Antimony During MBE Growth; 13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications; 14. In-rich InGaN; 15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices; 16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors; 17. MBE of Semiconducting Oxides; 18. ZnO Materials and Devices grown by MBE; 19. MBE of Complex Oxides; 20. Epitaxial Systems Combining Oxides and Semiconductors; 21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor; 22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic; 23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials; 24. MBE of Semimagnetic Quantum Dots; 25. MBE Growth of Graphene; 26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers; 27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators; 28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth; 29. MBE of II-VI Lasers; 30. MBE Growth of Terahertz Quantum Cascade Lasers; 31. MBE as a Mass Production Technique; 32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs; 33. Mass Production of Sensors Grown by MBE

Quotes and reviews

"Molecular beam epitaxy is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum. The substrate's crystal structure provides a template for the particles in the beam to organize themselves as they deposit onto the substrate. The technique can be put to a remarkably broad set of uses. In this 31 chapter volume, editor Henini…brings together a diverse set of physicists, electrical and mechanical engineers, and nanotechnologists to cover many of today's applications."--Reference & Research Book News, December 2013

Free Shipping
Shop with Confidence

Free Shipping around the world
▪ Broad range of products
▪ 30 days return policy

Contact Us