There have been great advances in our understanding and use of inorganic carbon in recent years, following the development of the vapour synthesis of diamond, the discovery of C60 molecule and the discovery of carbon nanotubes.
This issue contains the papers from the Symposium K Carbon-based Materials for Microelectronics of the European Materials Research Society meeting which was held on 16-19 June 1998, Strasbourg, France. The symposium covered fullerenes, nanotubes, diamond and amorphous carbon. It was able to show the similarities between the sp2 and sp3 forms of carbon, and between the crystalline, nano-structured and amorphous forms. Carbon is unique in having such a range of covalently bonded forms.
The symposium consisted of 34 oral papers, of which 10 were invited, and 35 poster papers. The papers in this proceedings cover many of the recent developments in carbon, for example the effect of doping on the electronic structure of nanotubes, the discovery of phosphorus doping of diamond, the surface structure and electronic structure of diamond, and the field emission properties of diamond and diamond-like carbon.
The applications of carbon lag some way behind those of other materials, but the symposium highlighted the uses or potential of carbon in xerography, in field emission displays and in photoconductivity-based sensors and radiation detectors.
For scientists and engineers in the area of carbon-based materials.
Carbon-Based Materials for Micoelectronics, 1st Edition
Preface (J. Robertson et al
.). Organic photoconductors with C60
for xerography (C. Schlebusch et al.
EXAFS study of structural and dynamic properties of Gd@C82
between 10 and 300 K (H. Giefers et al
thin films on Ag(001): an STM study (G. Costantini et al.
). Electron energy-loss spectroscopy studies of single wall carbon nanotubes (M. Knupfer et al.
). Scanning probe method investigation of carbon nanotubes produced by high energy ion irradiation of graphite (L.P. Biró et al
.). Field emission from diamond, diamond-like and nanostructured carbon films (O.M. Küttel et al
.). Field emission of nitrogenated amorphous carbon films (U. Hoffman et al.
). Electron field emission from diamond and diamond-like carbon for field emission displays (J. Robertson). Insights on the deposition mechanism of sputtered amorphous carbon films (S. Logothetidis et al.
). C-H bonding of polymer-like hydrogenated amorphous carbon films investigated by in-situ infrared ellipsometry (T. Heit et al.
). A study of the effects of nitrogen incorporation and annealing on the properties of hydrogenated amorphous carbon films (R.U.A. Khan et al
.). Doping of diamond (R. Kalish). &dgr;-Doping in diamond (M. Kunze et al.
). Electronic properties of single crystalline diamond surfaces (L. Ley et al.
). Mechanisms of surface conductivity in thin film diamond: application to high performance devices (H.J. Looi et al.
). A large range of boron doping with low compensation ratio for homoepitaxial diamond films (J.-P. Lagrange et al.
). High-performance devices from surface-conducting thin-film diamond (R.B. Jackman et al.). Electron energy-loss spectroscopy in transmission of undoped and doped diamond films (S. Waidmann et al.
). Photoconductivity and recombination in diamond-like carbon (A. Ilie et al.
). Structure, dynamics and optical properties of fullerenes C60
(Yu.I. Prilutski et al.
). Doping mechanism in tetrahedral amorphous carbon (C.W. Chen, J. Robertson). Chromium in amorphous hydrogenated carbon based thin films prepared in a PACVD process (P. Gantenbelin et al.
). Frenkel-excitations of CN
=12,60) clusters (S.F. Kharlapenko, S.V. Rotkin). Evaluation of various processes for C60
Fe production (H. Lange et al.
). Fabrication of aluminum—carbon nanotube composites and their electrical properties (C.L. Xu et al.
). An investigation of the thermal profiles induced by energetic carbon molecules on a graphite surface (M. Kerford, R.P. Webb). Polycrystalline diamond formation by post-growth ion bombardment of sputter-deposited amorphous carbon films (P. Patsalas et al
.). Electrical behaviour of metal/a-C/Si and metal/CN/Si devices (E. Evangelou et al.
). Comparison of fullerene-iron complexes modeling with experimental results (E. Kowalska et al.