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Materials Science in Microelectronics I
The Relationships Between Thin Film Processing and Structure
2nd Edition - September 21, 2005
Author: Eugene Machlin
Language: English
Hardback ISBN:9780080446400
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eBook ISBN:9780080459608
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Thin films play a key role in the material science of microelectronics, and the subject matter of thin-films divides naturally into two headings: processing / structure…Read more
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Thin films play a key role in the material science of microelectronics, and the subject matter of thin-films divides naturally into two headings: processing / structure relationship, and structure / properties relationship.The first volume of Materials Science in Microelectronics focuses on the first relationship – that between processing and the structure of the thin-film. The state of the thin film’s surface during the period that one monolayer exists - before being buried in the next layer – determines the ultimate structure of the thin film, and thus its properties. This volume takes into consideration the following potential influencing factors: crystal defects, void structure, grain structure, interface structure in epitaxial films, the structure of amorphous films, and reaction-induced structure.An ideal text or reference work for students and researchers in material science, who need to learn the basics of thin films.
Materials Science postgraduate students and researchers with an interest in thin films.
Contents
Acknowledgment
Foreword
Preface to Revised Edition
Chapter I Deposition Parameters
1. Identification of Deposition Parameters that May Affect Thin Film Structure
2. Discussion of Vapor Deposition Parameters
2.1. Background Pressure of Chamber and Purity of Precursors
2.2. Line-of-Sight Travel of Incident Particles
2.3. Incident Particle Energy
2.4. Incident Particle Flux
2.5. Substrate and Its Cleanliness
2.6. Substrate Temperature
2.7. Composition of Deposit Relative to Target
2.8. Target
3. Deposition Parameters for Other Than PVD
4. Summary
Chapter II Defect Structure
1. Intercolumn (Interfiber) “Void” Networks
1.1. Summary of Observations Concerning Intercolumn “Void” Networks
1.2. Origin of Intercolumn “Void” Networks
1.3. Effect of Processing On Void and Column Structure
1.4. Temperature, T1, Delineating Transition Between Presence and Absence of “Void” Networks
1.5. Crystalline Versus Amorphous Structure in Zone 1
1.6. Instability of “Void” Network
1.7. Deposition Methods That Eliminate The Formation of “Void” Networks
2. Other Defects Introduced During Deposition At Low Substrate Temperature
2.1. Point Defects
2.2. Line Defects – Dislocations
2.3. Grain Boundaries and Stacking Faults
2.4. Three-Dimensional Defects
3. Summary of The Relations Between Deposition Methods and Defect Structures
Chapter III Grain Structure
1. Materials Science Background
2. Grain Morphology, Texture, and Size in As-Deposited Films
2.1. Vapor Deposition Onto Epitaxial Substrates in the Absence of Incident Energetic Particles.
2.2. Vapor Deposition Onto Non-Epitaxial Substrates in the Absence of Incident Energetic Particles.
2.3. Effect of Anisotropic Sticking Coefficient
2.4. Polycrystalline Semiconductors On Non-Epitaxial Substrates
2.5. Conclusions Regarding Grain Morphology, Size and Texture Produced Via Vapor Deposition in the Absence of Energetic Particles
3. Grain Morphology, Texture and Size in Vapor-Deposited Films Which Sense Energetic (Hyperthermal) Particles During Deposition
3.1. Deposition Onto Epitaxial Substrates
3.2. Deposition Onto Non-Epitaxial Substrates
3.3. Summary of Results On The Effects of Energetic Particle Bombardment During Deposition
4. Effects of Post-Deposition Processing On Grain Structure
4.1. Effect of Post-Deposition Annealing
4.2. Post-Deposition Bombardment At Elevated Temperature