Anatoliy V. Dvurechenskii

Anatoliy V. Dvurechenskii

Professor Anatoliy V. Dvurechenskii is Deputy Director for Science of Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia. His main research interests are in the field of atomic and electronic structure of point defects induced by fast electrons and ion beam irradiation; ion-beam assisted phase transition, crystal nucleation and growth; laser annealing, melting, solidification; electronic and optical phenomena in disordered system and low dimensional structures. His current research direction is quantum dot heterostructures: nanocrystal nucleation and growth with molecular beam epitaxy, pulsed ion beam action, pulsed laser annealing, electron transport and optical and spin phenomena in quantum dot heterostructures, nanoelectronics and nanophotonics, nanodevices. He has been awarded with the State Prize, the top honor of the Soviet Union in Science, for having carried out research on physical phenomena at pulsed laser annealing of thin semiconductor’s layers; the International prize of the Academies of Science of Soviet Union and German Democratic Republic, for research on ion implantation into semiconductors; and the Russian Federation Government Prize in the field of education, for the development of the system for training highly qualified researchers in the field of optoelectronics.In 2008 he was elected to Russian Academy of Science as corresponding member. He is a member of scientific boards in the Russian Academy of Science on the problems of “Radiation Physics of Solid State” and “Physics of Semiconductors.” Prof Dvurechenskii has published his research in more than 380 journal publications and nine book chapters.

Affiliations and Expertise

Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia

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