Alexander V. Latyshev

Alexander V. Latyshev

Professor Alexander V. Latyshev is Director of Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia. He is a specialist in the field of semiconductor physics, crystal growth, nanoheterostructures, electron&ion beam lithography, crystallography, structural diagnostics, and electron and atomic force microscopies. In particular Latyshev's research interests include various modes of electron microscopy and their applications to diagnostic and the study of semiconductor and metal surfaces. He is particularly interested in the field of ultra high vacuum reflection electron microscopy (UHV-REM) for in situ studies of the kinetic and structural processes during the sublimation, phase transition, initial stages of epitaxy and surface gas reaction. He is one of the pioneers, who revived this method and applied to various problems of surface science in Russia. He has published over 200 papers, seven book chapters (in English) and two monographs (in Russian). He has received several scientific awards includingthe RAS Corresponding Member and the Russian Federation Government Prize in Education in the field of optoelectronics.

Affiliations and Expertise

Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia

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